Plasma-Enhanced Chemical Vapor Deposition

PECVD is a fabrication method for depositing thin films on a wafer. PECVD is used to deposit SiO2, Si3N4 (SixNy), SixOyNz and amorphous Si films. Plasma is added in the deposition chamber with reactive gases to create the desired solid surface on the substrate. PECVD allows the creation of highly uniform thin layers, promotes purity and adhesion, and varies compositions on substrates of different materials and geometries. PECVD widely use in optics industry on manufacturing optical filters, anti-reflective films, and devices with an undesired refractive index. Other applications are in electronics and microelectronics, semiconductive or conductivecoating for parts or devices, and in the production of solar cells for surface passivation.  PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system is consists of RF plasma source, precision mass flow meter with gas mixing tank, and mechanical pump.   The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid state. Benefit of PECVD tube system are lower temperature processing compared to conventional CVD, film stress can be controlled by high/low frequency mixing techniques. Control over stoichiometry via process conditions and offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.

Sputtering is a Physical Vapor Deposition vacuum process used to deposit very thin films onto a substrate for a wide variety of commercial and scientific purposes. Sputtering occurs when an ionized gas molecule is used to displace atoms of a specific material. These atoms then bond at the atomic level to a substrate and create a thin film. Several types of sputtering processes exist, including ion beam, diode, and magnetron sputtering. Angstrom Sciences specializes in Magnetron Sputtering Technology. High Vacuum Mini Co-Sputtering System specifically designed for R&D laboratory and pilot production applications and capable of uniform deposition of ≦±5% (center-to-edge). It is designed with compact integrated design and high-speed turbopump is built-in. The sputtering system can be applied to a various application such as in aerospace & defense, automotive and optic industries.

Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a fabrication method for depositing thin films on a wafer. PECVD is used to deposit SiO2, Si3N4 (SixNy), SixOyNz and amorphous Si films. Plasma is added in the deposition chamber with reactive gases to create the desired solid surface on the substrate. PECVD allows the creation of highly uniform thin layers, promotes purity and adhesion, and varies compositions on substrates of different materials and geometries.

PECVD is widely used in optics industry on manufacturing optical filters, anti-reflective films, and devices with an undesired refractive index. Other applications are in electronics and microelectronics, semiconductive or conductivecoating for parts or devices, and in the production of solar cells for surface passivation. PECVD tube furnace system consists of RF plasma source, precision mass flow meter with gas mixing tank, and mechanical pump.

The PECVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid state. Benefit of PECVD tube system are lower temperature processing compared to conventional CVD, film stress can be controlled by high/low frequency mixing techniques. Control over stoichiometry via process conditions and offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition.

This article is brought to you by PT KGC Saintifik. Visit them at booth B14 this April to find out more about the PECVD furnace.

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